RF Transistor 2N2907A
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RF Transistor 2N2907A

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 Product Description

Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 60 V
Collector- Emitter Voltage VCEO Max: - 60 V
Emitter- Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: - 1.6 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 175 C
Mounting Style: Through Hole
Package / Case: TO-18
Continuous Collector Current: - 0.6 A
DC Collector/Base Gain hfe Min: 50
DC Current Gain hFE Max: 300
Maximum Power Dissipation: 400 mW
Minimum Operating Temperature: - 65 C


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